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Diamond materials illuminate the future of electronic equipment
**Abstract**
The Argonne National Laboratory, part of the U.S. Department of Energy, recently announced that two of their latest studies have uncovered previously unknown properties in nanocrystalline diamond films. By minimizing the "thermal budget," these newly discovered characteristics can significantly enhance the performance of integrated circuits.
In recent years, engineers have been striving to develop more efficient electronic devices by shrinking component sizes. However, they have consistently faced a major challenge known as the "thermal bottleneck," according to Anirudha Sumant, a nanoscientist at Argonne National Laboratory.
The thermal bottleneck refers to the issue where excessive heat generated during device operation negatively impacts performance. To address this problem, researchers have focused on developing materials and methods that can effectively dissipate heat from electronic components.
Diamond films, known for their exceptional thermal properties, have long been considered promising candidates for use in heat sinks. However, the high temperature required for diamond film deposition—typically above 800°C—has made it difficult to integrate them with other semiconductor materials.
Sumant explained, "Our goal is to grow diamond films at the lowest possible temperature. If we can bring it down to around 400°C, it becomes feasible to integrate diamond films with other semiconductors."
By modifying the deposition process, Sumant and his team successfully reduced the growth temperature to approximately 400°C and adjusted the thermal properties of the diamond films by controlling the grain size. This breakthrough enabled the direct integration of diamond with graphene and gallium nitride, both of which are critical materials in modern electronics.
According to Sumant, diamond exhibits superior thermal conductivity compared to silicon and silicon oxide, which are commonly used in graphene-based devices. With improved heat dissipation, diamond-enhanced graphene materials can handle higher current densities.
In another study, the same low-temperature diamond film technique was applied to combine the material with gallium nitride, widely used in LED manufacturing. The experiment involved depositing a 300-nm-thick diamond film on a gallium nitride substrate, demonstrating remarkable thermal conductivity. Since temperature differences in integrated circuits directly affect device performance, Sumant emphasized the importance of this research.
"Our experiments reveal new, efficient ways to manage heat and save energy," Sumant said. He added that these techniques are crucial for industrial applications and help overcome traditional limitations in semiconductor manufacturing, paving the way for next-generation electronic devices.
The findings were published in *Nano Letters* and *Advanced Functional Materials*. The research was conducted in collaboration with Professor Alexander Balandin from the University of California and students Jie Yu, Guanxiong Liu, and Dr. Vivek Goyal. The project was funded by the U.S. Department of Energy’s Basic Energy Sciences Program. (Translated from “Diamond-based materials brighten the future of electronicsâ€)